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MIT’s chip stacking leap could slash energy use for hungry AI chips
Artificial intelligence is colliding with a hard physical limit: the energy it takes to move data on and off chips. Training ...
Recent advances in the field of artificial intelligence (AI) have opened new exciting possibilities for the rapid analysis of ...
Tech Xplore on MSN
Ultrathin ferroelectric capacitors for next-generation memory devices
An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...
Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...
Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...
Researchers develop atom-thin material that cuts memory energy use tenfold, opening the door to ultra-efficient AI, mobile tech and data processing. (Nanowerk News) Memory units are essential ...
This “heterostructure” consists of a stack of multiple different thin films, including a collection of aligned carbon nanotubes with different orientations. Credit: University of Utah This ...
For several decades, the semiconductor industry has been looking for alternative memory technologies to fill the gap between dynamic random-access memory (DRAM), the compute system’s main memory, and ...
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