An ultrathin ferroelectric capacitor, designed by researchers from Japan, demonstrates strong electric polarization despite ...

Researchers in Japan have developed ultrathin ferroelectric capacitors that maintain strong polarization at a stack thickness ...

Ferroelectric capacitors can be made as thin as 30nm to add memory between the metallisation layers of ICs, according to ...

Researchers from the Institute of Science Tokyo and Canon ANELVA Corporation built an ultrathin ferroelectric memory ...

Recent advances in the field of artificial intelligence (AI) have opened new exciting possibilities for the rapid analysis of ...

Researchers develop atom-thin material that cuts memory energy use tenfold, opening the door to ultra-efficient AI, mobile tech and data processing. (Nanowerk News) Memory units are essential ...

Researchers demonstrate a new strategy for magnetization reversal in multiferroic materials, opening pathways to more energy-efficient electronics. (Nanowerk News) As the digital world demands greater ...